| PART |
Description |
Maker |
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRFI720G IRFI720GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V/ Rds(on)=1.8ohm/ Id=2.6A)
|
IRF[International Rectifier]
|
| IRF3808L IRF3808S RF3808S |
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
| IRFI3205 IRFI3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=64A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.008ohm/ Id=64A)
|
IRF[International Rectifier]
|
| IRFI744G IRFI744GPBF |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=450V Rds(on)=0.63ohm Id=4.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A) 功率MOSFET（减振钢板基本\u003d 450V，的Rds（on）\u003d 0.63ohm，身份证\u003d 4.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIZ24N IRFIZ24NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)
|
IRF[International Rectifier]
|
| IRFB18N50K |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
|
IRF[International Rectifier]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
